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RoHS Dual N Channel Mosfet Power Transistor SOT-23-6L MOSFETS 6.0 A VDSS

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RoHS Dual N Channel Mosfet Power Transistor SOT-23-6L MOSFETS 6.0 A VDSS

Name: RoHS Dual N Channel Mosfet Power Transistor SOT236L MOSFETS 60 A VDSS
Brand: OTOMO
Price: 1 USD

Place of Origin : ShenZhen China

Brand Name : OTOMO

Certification : RoHS、SGS

MOQ : 1000-2000 PCS

Price : Negotiated

Packaging Details : Boxed

Delivery Time : 1 - 2 Weeks

Payment Terms : L/C T/T Western Union

Supply Ability : 18,000,000PCS / Per Day

Model Number : 8205A

Product name : Mosfet Power Transistor

VDSS : 6.0 A

APPLICATION : Power Management

FEATURE : Low Gate Charge

Power mosfet transistor : SOT-23-6L Plastic-Encapsulate

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8205A SOT-23-6L Plastic-Encapsulate MOSFETS Dual N-Channel MOSFET

General Description

VDSS= V ID= 6.0 A

z 20

D1,D2

RDS(on) < Ω@V = 4.5V

25m

RDS(on) < Ω@V = 2.5V

32m

1 2 3

D1,D2 S2

FEATURE

z TrenchFET Power MOSFET

z Excellent R_DS(on)

z Low Gate Charge

z High Power and Current Handing Capability

z Surface Mount Package

APPLICATION

z Battery Protection

z Load Switch

z Power Management

Parameter Symbol Test Condition Min Typ Max Unit

STATIC CHARACTERICTISCS

Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =250µA 19 V

Zero gate voltage drain current IDSS VDS =18V,VGS = 0V 1 µA

Gate-body leakage current IGSS VGS =±10V, VDS = 0V ±100 nA

Gate threshold voltage (note 3) VGS(th) VDS =VGS, ID =250µA 0.5 0.9V

Forward tranconductance (note 3) gFS VDS =5V, ID =4.5A 10 S

Diode forward voltage (note 3) VSD IS=1.25A, VGS = 0V 1.2 V

DYNAMIC CHARACTERICTISCS (note4)

Input Capacitance Ciss 800 pF

Output Capacitance Coss VDS =8V,VGS =0V,f =1MHz 155 pF

Reverse Transfer Capacitance Crss 125 pF

SWITCHING CHARACTERICTISCS (note 4)

Turn-on delay time td(on) 18 ns

Turn-on rise time tr VDD=10V,VGS=4V, 5 ns

Turn-off delay time td(off) ID=1A,RGEN=10Ω 43 ns

Turn-off fall time tf 20 ns

Total Gate Charge Qg 11 nC

Gate-Source Charge Qgs VDS =10V,VGS =4.5V,ID=4A 2.3 nC

Gate-Drain Charge Qgd 2.5 nC

Notes :

1. Repetitive rating:Pluse width limited by maximum junction temperature

2. Surface Mounted on FR4 board,t≤10 sec.

3. Pulse test : Pulse width≤300μs, duty cycle≤2%.

4. Guaranteed by design, not subject to production.

RoHS Dual N Channel Mosfet Power Transistor SOT-23-6L MOSFETS 6.0 A VDSS

SOT-23-6L Package Outline Dimensions

Product Tags:

RoHS Mosfet Power Transistor

6.0 A high current mosfet switch

8205A Mosfet Power Transistor

China RoHS Dual N Channel Mosfet Power Transistor SOT-23-6L MOSFETS 6.0 A VDSS factory

RoHS Dual N Channel Mosfet Power Transistor SOT-23-6L MOSFETS 6.0 A VDSS Images

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